Phase transition and phase change materials for high frequencies applications
Thursday, 21 September 2017, 8:30-10:30
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In-depth caracterisation of the structural phase change of Germanium Telluride for RF switches A. Léon, D. Saint-Patrice, N. Castellani, G. Navarro, V. Puyal, B. Reig, F. Podevin, P. Ferrari, E. Perret Univ. Grenoble Alpes, Grenoble, France |
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Optical Switching of GeTe Phase Change Materials for High-Frequency Applications A. Crunteanu1, L. Huitema1, J.-C. Orlianges1, C. Guines1, D. Passerieux1, H. Wong2 1CNRS/Université de Limoges, Limoges, France, 2City University of Hong-Kong, Hong-Kong |
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Arrays of GeTe Electrically Activated RF Switches A.Ghalem, A.Hariri, C.Guines, D.Passerieux, L.Huitema, P.Blondy, A.Crunteanu CNRS/University of Limoges, Limoges, France |
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Chalcogenide Phase Change Materials: An Electronic Perspective J. G. Champlain US Naval Research Laboratory, Washington (DC), USA |
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Inline Phase-Change Switch Material Optimizations for Increased Reliability N. El-Hinnawy1,2, P. Borodulin3,4, M. R. King3, C. Padilla3, A. Ezis3, J. Paramesh2, J. A. Bain2, R. M. Young3 1TowerJazz, Newport Beach (CA), USA, 2Carnegie Mellon University, Pittsburgh (PA), USA, 3Northrop Grumman Systems Corporation (Mission Systems Sector) Linthicum (MD), USA, 4Johns Hopkins University, Baltimore (MD), USA |
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Phase Change RF Switches with FCO Exceeding 10 THz J. A. Bain, G. Slovin, M. Xu, R. Singh, N. El-Hinnawy, J Paramesh Carnegie Mellon University, Pittsburgh (PA), USA |